The PDTA115TT,215 PNP transistor is a surface-mount device with a TO-236-3 package. It has a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transistor can dissipate up to 250mW of power and operates over a temperature range of -65°C to 150°C. It is lead-free and RoHS compliant.
PackageTO-236-3
MountingSurface Mount
PolarityPNP
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the NXP PDTA115TT,215 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
NXP PDTA115TT,215 technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 150mV |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP PDTA115TT,215 Datasheet
Download the complete datasheet for NXP PDTA115TT,215 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.