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Technical Specifications
NXP PESD3V3L1BA115 technical specifications.
General
| Capacitance | 101pF |
| Clamping Voltage-Max | 26V |
| Diode Type | ZENER |
| Direction | Bidirectional |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 6.9V |
| Min Breakdown Voltage | 5.8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500W |
| Mount | Surface Mount |
| Number of Bidirectional Channels | 1 |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Peak Pulse Current | 18A |
| Peak Pulse Power | 500W |
| Power Line Protection | No |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Standoff Voltage | 3.3V |
| RoHS Compliant | Yes |
| Working Voltage | 3.3V |
Compliance
| RoHS | Compliant |
Datasheet
NXP PESD3V3L1BA115 Datasheet
Download the complete datasheet for NXP PESD3V3L1BA115 to view detailed technical specifications.
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