The PH3330LT/R is a single N-channel MOSFET with a breakdown voltage of 30V and a continuous drain current of 100A. It can handle a maximum power dissipation of 62.5W and has a gate to source voltage of 20V. The device is packaged in a SOT-669 surface mount package and has an operating temperature range of -55°C to 150°C. The PH3330LT/R is RoHS compliant and available in quantities of 1500 per reel.
PackageSOT-669
MountingSurface Mount
PolarityN-CHANNEL
Power62.5W
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Technical Specifications
NXP PH3330LT/R technical specifications.
General
| Package/Case | SOT-669 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.3mR |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 62.5W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 52ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PH3330LT/R Datasheet
Download the complete datasheet for NXP PH3330LT/R to view detailed technical specifications.
No datasheet is available for this part.
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