The PH3855LT/R is a N-Channel Power MOSFET with a breakdown voltage of 55V and a continuous drain current of 24A. It has a drain to source resistance of 36mR and a power dissipation of 50W. The device is packaged in a SOT-669 case and is available in tape and reel packaging. It operates over a temperature range of -55°C to 175°C.
PackageSOT-669
PolarityN-CHANNEL
Power50W
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Technical Specifications
NXP PH3855LT/R technical specifications.
General
| Package/Case | SOT-669 |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 36mR |
| Fall Time | 72ns |
| Gate to Source Voltage (Vgs) | 15V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Turn-Off Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PH3855LT/R Datasheet
Download the complete datasheet for NXP PH3855LT/R to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.