The PH5030AL115 is an N-Channel TrenchMOS power MOSFET from NXP, featuring a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 61W and a continuous drain current of 91A. The device is packaged in a SOT-669 surface mount package, which is suitable for automated assembly. The PH5030AL115 has a drain to source breakdown voltage of 35V and a drain to source resistance of 5mR.
PackageSOT-669
MountingSurface Mount
PolarityN-CHANNEL
Power61W
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Technical Specifications
NXP PH5030AL115 technical specifications.
General
| Package/Case | SOT-669 |
| Continuous Drain Current (ID) | 91A |
| Drain to Source Breakdown Voltage | 35V |
| Drain to Source Resistance | 5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.76nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 61W |
| Mount | Surface Mount |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 61W |
| Radiation Hardening | No |
| Rds On Max | 5mR |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 19ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PH5030AL115 Datasheet
Download the complete datasheet for NXP PH5030AL115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.