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NXP PH6325L115 technical specifications.
| Package/Case | SOT-669 |
| Continuous Drain Current (ID) | 78.7A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 6.3mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.871nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 62.5W |
| Radiation Hardening | No |
| Rds On Max | 6.3mR |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 25ns |
| RoHS | Compliant |
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