The PH7030AL,115 is a high-power N-Channel TrenchMOS MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 30V and a continuous drain current of 76A. The device has a maximum power dissipation of 51W and a gate to source voltage of 20V. It is available in a SOT-669 package and is suitable for surface mount applications.
PackageSOT-669
MountingSurface Mount
PolarityN-CHANNEL
Power51W
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Technical Specifications
NXP PH7030AL,115 technical specifications.
General
| Package/Case | SOT-669 |
| Continuous Drain Current (ID) | 76A |
| Drain to Source Breakdown Voltage | 35V |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.27nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 51W |
| Mount | Surface Mount |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 51W |
| Radiation Hardening | No |
| Rds On Max | 7mR |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 24ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PH7030AL,115 Datasheet
Download the complete datasheet for NXP PH7030AL,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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