The PH8030LT/R is an N-CHANNEL power MOSFET with a drain to source breakdown voltage of 30V and a continuous drain current of 76.7A. It features a drain to source resistance of 5.9mR and a power dissipation of 62.5W. The device operates within a temperature range of -55°C to 150°C and is packaged in a SOT-669 package, available in quantities of 1500 per reel. The PH8030LT/R is suitable for high-power applications requiring fast switching times, with a fall time of 14ns and a turn-off delay time of 27ns.
PackageSOT-669
PolarityN-CHANNEL
Power62.5W
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Technical Specifications
NXP PH8030LT/R technical specifications.
General
| Package/Case | SOT-669 |
| Continuous Drain Current (ID) | 76.7A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.9mR |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 62.5W |
| Turn-Off Delay Time | 27ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PH8030LT/R Datasheet
Download the complete datasheet for NXP PH8030LT/R to view detailed technical specifications.
No datasheet is available for this part.