The PH9025LT/R is an N-Channel MOSFET with a continuous drain current of 66A and a drain to source breakdown voltage of 25V. It features a drain to source resistance of 9mR and a gate to source voltage of 20V. The device operates over a temperature range of -55°C to 150°C and is packaged in tape and reel quantities of 1500. The PH9025LT/R is suitable for high-power applications requiring fast switching times, with a fall time of 15ns and a turn-off delay time of 24ns.
PolarityN-CHANNEL
Power62.5W
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Technical Specifications
NXP PH9025LT/R technical specifications.
General
| Continuous Drain Current (ID) | 66A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 9mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 62.5W |
| Turn-Off Delay Time | 24ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PH9025LT/R Datasheet
Download the complete datasheet for NXP PH9025LT/R to view detailed technical specifications.
No datasheet is available for this part.