The PHB160NQ08T/T3 is an N-Channel MOSFET with a maximum operating temperature range of -55°C to 175°C. It features a drain to source breakdown voltage of 75V and a continuous drain current of 75A. The device has a drain to source resistance of 5.6mR and a power dissipation of 300W. The SOT-404 package is available in quantities of 800 per reel.
NXP PHB160NQ08T/T3 technical specifications.
| Package/Case | SOT-404 |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 5.6mR |
| Fall Time | 48ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Turn-Off Delay Time | 128ns |
| RoHS | Compliant |
No datasheet is available for this part.
