The PHB18NQ10T/T3 is a high-power N-Channel MOSFET from NXP, featuring a maximum operating temperature range of -55°C to 175°C. With a continuous drain current of 18A and a drain to source breakdown voltage of 100V, this device is suitable for high-current applications. The SOT-404 package is designed for surface mount applications and is available in tape and reel packaging. The MOSFET is RoHS compliant and has a power dissipation of 79W.
NXP PHB18NQ10T/T3 technical specifications.
| Package/Case | SOT-404 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 90mR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 79W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 18ns |
| RoHS | Compliant |
No datasheet is available for this part.
