The PHB191NQ06LT,118 is a 55V 75A SOT TrenchMOS MOSFET from NXP. It features a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. The device has a maximum power dissipation of 300W and is lead free. It is also RoHS compliant and has a maximum dual supply voltage of 55V.
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NXP PHB191NQ06LT,118 technical specifications.
| Package/Case | SOT |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 178ns |
| Gate to Source Voltage (Vgs) | 15V |
| Input Capacitance | 7.665nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 3.7mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 273ns |
| Turn-On Delay Time | 63ns |
| RoHS | Compliant |
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