The PHB32N06LT/T3 is a N-Channel Power MOSFET with a maximum operating temperature range of -55°C to 175°C. It has a drain to source breakdown voltage of 60V and a continuous drain current of 34A. The device features a drain to source resistance of 37mΩ and a power dissipation of 97W. It is available in a SOT-404 package, packaged on a tape and reel in quantities of 800.
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NXP PHB32N06LT/T3 technical specifications.
| Package/Case | SOT-404 |
| Continuous Drain Current (ID) | 34A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 37mR |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 15V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 97W |
| Turn-Off Delay Time | 45ns |
| RoHS | Compliant |
