The PHB47NQ10T,118 is a 100V N-CHANNEL power MOSFET with a continuous drain current of 47A. It features a drain to source breakdown voltage of 100V and a drain to source resistance of 28 milliohms. The device has a maximum operating temperature range of -55°C to 175°C and is compliant with RoHS regulations. It is packaged in a SOT package and is lead-free.
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NXP PHB47NQ10T,118 technical specifications.
| Package/Case | SOT |
| Continuous Drain Current (ID) | 47A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.1nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 166W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 166W |
| Rds On Max | 28mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 83ns |
| RoHS | Compliant |
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