The PHB47NQ10T/T3 is a high-power N-channel power MOSFET from NXP, featuring a maximum operating temperature range of -55°C to 175°C. It has a continuous drain current rating of 47A and a drain to source breakdown voltage of 100V. The device has a drain to source resistance of 28mR and a fall time of 45ns. It can handle a maximum power dissipation of 166W and has a turn-off delay time of 83ns.
NXP PHB47NQ10T/T3 technical specifications.
| Package/Case | SOT-404 |
| Continuous Drain Current (ID) | 47A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 28mR |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 166W |
| Turn-Off Delay Time | 83ns |
| RoHS | Compliant |
No datasheet is available for this part.
