The NXP PHK12NQ10T is a 100V power MOSFET with a continuous drain current of 11.6A and a maximum power dissipation of 8.9W. It is packaged in a SOIC package and is suitable for surface mount technology. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The PHK12NQ10T has a nominal Vgs of 3V and a threshold voltage of 3V.
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| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11.6A |
| Drain to Source Voltage (Vdss) | 100V |
| Dual Supply Voltage | 100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 8.9W |
| Nominal Vgs | 3V |
| Power Dissipation | 8.9W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Termination | SMD/SMT |
| Threshold Voltage | 3V |
| Width | 4.05mm |
| RoHS | Compliant |
