PackageSOIC
Power8.9W
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Technical Specifications
NXP PHK12NQ10T technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11.6A |
| Drain to Source Voltage (Vdss) | 100V |
| Dual Supply Voltage | 100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 8.9W |
| Nominal Vgs | 3V |
| Power Dissipation | 8.9W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Termination | SMD/SMT |
| Threshold Voltage | 3V |
| Width | 4.05mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PHK12NQ10T Datasheet
Download the complete datasheet for NXP PHK12NQ10T to view detailed technical specifications.
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