PackageSOIC
Power8.9W
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Technical Specifications
NXP PHK12NQ10T technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
11.6A
Drain to Source Voltage (Vdss)
100V
Dual Supply Voltage
100V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
8.9W
Nominal Vgs
3V
Power Dissipation
8.9W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Row Spacing
6.3mm
Termination
SMD/SMT
Threshold Voltage
3V
Width
4.05mm
Compliance
RoHS
Compliant
Datasheet
NXP PHK12NQ10T Datasheet
Download the complete datasheet for NXP PHK12NQ10T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.