The PHK12NQ10T/T3 is a N-Channel MOSFET from NXP with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 11.6A and a drain to source breakdown voltage of 100V. The device also features a drain to source resistance of 28mR and a power dissipation of 8.9W. The MOSFET is packaged in a SO package and is available in quantities of 2500 per reel.
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| Package/Case | SO |
| Continuous Drain Current (ID) | 11.6A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 28mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 8.9W |
| Turn-Off Delay Time | 52ns |
| RoHS | Compliant |
