The PHK13N03LT/T3 is an N-Channel MOSFET with a drain to source breakdown voltage of 30V and a continuous drain current of 13.8A. It features a drain to source resistance of 20mR and a fall time of 11ns. The device operates over a temperature range of -55°C to 150°C and has a power dissipation of 6.25W. The PHK13N03LT/T3 is packaged in a SO package and is available in quantities of 2500 per reel.
NXP PHK13N03LT/T3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 13.8A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 20mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 6.25W |
| Turn-Off Delay Time | 23ns |
| RoHS | Compliant |
No datasheet is available for this part.
