The PHKD13N03LT,118 is a 2-channel N-channel TrenchMOS FET from NXP. It features a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. The device has a maximum power dissipation of 3.57W and a continuous drain current of 10.4A. It is packaged in a surface mount SO package and is RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power3.57W
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Technical Specifications
NXP PHKD13N03LT,118 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 10.4A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 11ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 752pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.57W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.57W |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 23ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PHKD13N03LT,118 Datasheet
Download the complete datasheet for NXP PHKD13N03LT,118 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.