MOSFET TAPE13 MOSFET
NXP PHN210T/T3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 3.4A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 100mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21ns |
| RoHS | Compliant |
No datasheet is available for this part.
