The PHP18NQ10T127 is a 100V, 18A TrenchMOS FET from NXP, packaged in a SOT case. It features a maximum drain-source on resistance of 243mR and a maximum power dissipation of 79W. The device is lead-free and available in quantities of 1000, packaged in rail or tube packaging.
PackageSOT
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Technical Specifications
NXP PHP18NQ10T127 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 243MR |
| Input Capacitance | 633pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 100V |
| Max Power Dissipation | 79W |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Rds On Max | 90mR |
| Series | TrenchMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
NXP PHP18NQ10T127 Datasheet
Download the complete datasheet for NXP PHP18NQ10T127 to view detailed technical specifications.
No datasheet is available for this part.