The PHP45NQ10T127 is a 100V N-CHANNEL TrenchMOS MOSFET from NXP, featuring a continuous drain current of 47A and a drain to source resistance of 25mR. It is packaged in a SOT package and has a maximum operating temperature range of -55°C to 175°C. The device has a maximum power dissipation of 150W and is available in a packaging quantity of 50 units per rail/Tube.
PackageSOT
PolarityN-CHANNEL
Power150W
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Technical Specifications
NXP PHP45NQ10T127 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 47A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 58ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.4mm |
| Input Capacitance | 2.6nF |
| Length | 10.3mm |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Rds On Max | 25mR |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 69ns |
| Turn-On Delay Time | 18ns |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PHP45NQ10T127 Datasheet
Download the complete datasheet for NXP PHP45NQ10T127 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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