The PHP45NQ11T,127 is an N-Channel TrenchMOS MOSFET from NXP, featuring a maximum drain current of 47A and a breakdown voltage of 105V. It operates within a temperature range of -55°C to 175°C and is packaged in a SOT case. The device is RoHS compliant and has a maximum power dissipation of 148W.
PackageSOT
PolarityN-CHANNEL
Power150W
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Technical Specifications
NXP PHP45NQ11T,127 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 47A |
| Drain to Source Breakdown Voltage | 105V |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 105V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.404nF |
| Max Dual Supply Voltage | 105V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 148W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Rds On Max | 16mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 40ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PHP45NQ11T,127 Datasheet
Download the complete datasheet for NXP PHP45NQ11T,127 to view detailed technical specifications.
No datasheet is available for this part.
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