The PHT4NQ10LT/T3 is an N-Channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It has a continuous drain current of 3.5A and a drain to source breakdown voltage of 100V. The device features a drain to source resistance of 250mR and a gate to source voltage of 16V. It can dissipate a maximum power of 6.9W and has a turn-off delay time of 52ns.
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NXP PHT4NQ10LT/T3 technical specifications.
| Package/Case | SC |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 250mR |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 16V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 6.9W |
| Turn-Off Delay Time | 52ns |
| RoHS | Compliant |
No datasheet is available for this part.
