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Technical Specifications
NXP PHT4NQ10LT135 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 40MR |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.7mm |
| Input Capacitance | 374pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 6.9W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 6.9W |
| Radiation Hardening | No |
| Rds On Max | 250mR |
| Reach SVHC Compliant | No |
| Series | TrenchMOS™ |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 4ns |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PHT4NQ10LT135 Datasheet
Download the complete datasheet for NXP PHT4NQ10LT135 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.