The PHT6N06LT135 is a single N-channel TrenchMOS MOSFET from NXP, featuring a maximum drain to source breakdown voltage of 55V and a continuous drain current of 5.5A. It has a maximum power dissipation of 1.8W and a drain to source resistance of 150mR. The device is packaged in a SOT package and is lead free. It operates over a temperature range of -55°C to 150°C.
PackageSOT
PolarityN-CHANNEL
Power1.8W
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Technical Specifications
NXP PHT6N06LT135 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 13V |
| Input Capacitance | 330pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 150mR |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PHT6N06LT135 Datasheet
Download the complete datasheet for NXP PHT6N06LT135 to view detailed technical specifications.
No datasheet is available for this part.