The PIMH9 is a surface mount NPN transistor with a collector emitter saturation voltage of 100mV and emitter base voltage of 6V. It has a maximum collector current of 100mA and a maximum power dissipation of 400mW. The transistor is packaged in a SOT-457 case with dimensions of 1.1mm height, 3.1mm length, and 1.7mm width. It is RoHS compliant and operates over a temperature range of -55°C to 150°C.
NXP PIMH9 technical specifications.
| Package/Case | SOT-457 |
| Collector Emitter Saturation Voltage | 100mV |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 1.1mm |
| Length | 3.1mm |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400mW |
| Mount | Surface Mount |
| RoHS Compliant | Yes |
| Width | 1.7mm |
| RoHS | Compliant |
Download the complete datasheet for NXP PIMH9 to view detailed technical specifications.
No datasheet is available for this part.