PNP bipolar transistor in a SOT-23 (TO-236AB) surface-mount package. Features a maximum collector current of 100mA and a maximum power dissipation of 250mW. Offers a collector-emitter breakdown voltage of 40V and a collector-base voltage of 40V. Minimum DC current gain (hFE) is 100, with a transition frequency of 150MHz. Operates across a temperature range of -65°C to 150°C.
NXP PMBS3906215 technical specifications.
| Package/Case | TO-236AB |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | -40V |
| Collector-emitter Voltage-Max | 400mV |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Termination | SMD/SMT |
| Transition Frequency | 150MHz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for NXP PMBS3906215 to view detailed technical specifications.
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