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Technical Specifications
NXP PMBTA56215 technical specifications.
General
Package/Case
TO-236-3
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
-80V
Collector-emitter Voltage-Max
250mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
80V
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
250mW
Mount
Surface Mount
Package Quantity
1
Packaging
Cut Tape
Polarity
PNP
Radiation Hardening
No
Reach SVHC Compliant
No
Termination
SMD/SMT
Transition Frequency
50MHz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
NXP PMBTA56215 Datasheet
Download the complete datasheet for NXP PMBTA56215 to view detailed technical specifications.
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