The PMDPB70EN115 is a 2-element N-Channel FET from NXP, packaged in a SOT case. It can handle a continuous drain current of 3.5A and has a maximum operating temperature range of -55°C to 150°C. The device has a drain to source breakdown voltage of 30V and a maximum power dissipation of 510mW. It also features a low drain to source resistance of 57mΩ and a fast switching time with a fall time of 5ns and turn-off delay time of 15ns.
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| Package/Case | SOT |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 57mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 130pF |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 510mW |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.165W |
| Radiation Hardening | No |
| Rds On Max | 57mR |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 3ns |
| RoHS | Compliant |
