The PMDPB80XP,115 is a P-channel dual field-effect transistor from NXP. It features a maximum continuous drain current of 2.7A and a drain-to-source breakdown voltage of -20V. The device is packaged in a SOT package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 485mW.
PackageSOT
PolarityP-CHANNEL
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Technical Specifications
NXP PMDPB80XP,115 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | -600mV |
| Input Capacitance | 550pF |
| Max Dual Supply Voltage | -20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 485mW |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 102mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 120ns |
| Turn-On Delay Time | 6ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMDPB80XP,115 Datasheet
Download the complete datasheet for NXP PMDPB80XP,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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