The PMEM1505NGT/R is a NPN transistor from NXP, packaged in a SOT-353 case. It can handle a collector-emitter voltage of up to 15V and a continuous collector current of 600mA. The transistor has a gain bandwidth product of 420MHz and a minimum current gain of 200. It operates over a temperature range of -65°C to 125°C and can dissipate up to 300mW of power.
PackageSOT-353
PolarityNPN
Quick Jump:
Technical Specifications
NXP PMEM1505NGT/R technical specifications.
General
| Package/Case | SOT-353 |
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector-emitter Voltage-Max | 15V |
| Continuous Collector Current | 600mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 420MHz |
| hFE Min | 200 |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMEM1505NGT/R Datasheet
Download the complete datasheet for NXP PMEM1505NGT/R to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
