The PMEM4020ANDT/R is an NPN transistor with a collector base voltage of 40V and a collector emitter saturation voltage of 400mV. It has a gain bandwidth product of 150MHz and a minimum current gain of 300. The device is packaged in a SOT-457 package and is available in quantities of 3000 on tape and reel. The transistor can operate at temperatures between -65°C and 150°C and can dissipate up to 600mW of power.
PackageSOT-457
PolarityNPN
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Technical Specifications
NXP PMEM4020ANDT/R technical specifications.
General
| Package/Case | SOT-457 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector-emitter Voltage-Max | 40V |
| Continuous Collector Current | 1.65A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 300 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 600mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMEM4020ANDT/R Datasheet
Download the complete datasheet for NXP PMEM4020ANDT/R to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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