The PMEM4020APDT/R PNP transistor features a collector-emitter saturation voltage of -530mV and a gain bandwidth product of 150MHz. It operates within a temperature range of -65°C to 150°C and can handle a maximum power dissipation of 600mW. The transistor is packaged in a SOT-457 package and is available in quantities of 3000 on tape and reel. It has a minimum current gain of 300 and a maximum collector current of 1.3A.
PackageSOT-457
PolarityPNP
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Technical Specifications
NXP PMEM4020APDT/R technical specifications.
General
| Package/Case | SOT-457 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Saturation Voltage | -530mV |
| Collector-emitter Voltage-Max | 40V |
| Continuous Collector Current | 1.3A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 300 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 600mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMEM4020APDT/R Datasheet
Download the complete datasheet for NXP PMEM4020APDT/R to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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