The PMF370XN115 is a TrenchMOS power MOSFET from NXP with a maximum drain to source voltage of 30V and continuous drain current of 870mA. It features a drain-source on resistance of 440mR and a maximum power dissipation of 560mW. The device is packaged in a SOT-8 package and is lead free. The operating temperature range is from -55°C to 150°C.
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Technical Specifications
NXP PMF370XN115 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 870mA |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 440MR |
| Fall Time | 5.5ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 37pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 560mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 440mR |
| Reach SVHC Compliant | No |
| Series | TrenchMOS™ |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 6.5ns |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMF370XN115 Datasheet
Download the complete datasheet for NXP PMF370XN115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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