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NXP PMGD280UN115 technical specifications.
| Package/Case | SOT |
| Continuous Drain Current (ID) | 870mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 340MR |
| Fall Time | 5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 45pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Dual Supply Voltage | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 340mR |
| Reach SVHC Compliant | No |
| Series | TrenchMOS™ |
| Threshold Voltage | 700mV |
| Turn-Off Delay Time | 18.5ns |
| Turn-On Delay Time | 4.5ns |
| Width | 1.35mm |
| RoHS | Compliant |
Download the complete datasheet for NXP PMGD280UN115 to view detailed technical specifications.
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