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Technical Specifications
NXP PMGD400UN,115 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 710mA |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 480mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 480MR |
| Dual Supply Voltage | 30V |
| Fall Time | 7.5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 43pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 410mW |
| Mount | Surface Mount |
| Nominal Vgs | 700mV |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 410mW |
| Radiation Hardening | No |
| Rds On Max | 480mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Termination | SMD/SMT |
| Threshold Voltage | 700mV |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 4ns |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMGD400UN,115 Datasheet
Download the complete datasheet for NXP PMGD400UN,115 to view detailed technical specifications.
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