Quick Jump:
Technical Specifications
NXP PMGD780SN115 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 490mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 920MR |
| Dual Supply Voltage | 60V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 23pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 410mW |
| Nominal Vgs | 2V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 920mR |
| Reach SVHC Compliant | No |
| Series | TrenchMOS™ |
| Termination | SMD/SMT |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 5ns |
| Turn-On Delay Time | 2ns |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMGD780SN115 Datasheet
Download the complete datasheet for NXP PMGD780SN115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.