The PMN27UP115 is a P-channel MOSFET from NXP with a maximum drain to source breakdown voltage of -20V and a continuous drain current of 5.7A. It features a maximum drain to source resistance of 32mR and a maximum power dissipation of 540mW. The device is packaged in a SOT package and is lead free. It operates over a temperature range of -55°C to 150°C.
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NXP PMN27UP115 technical specifications.
| Package/Case | SOT |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 32mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 32MR |
| Input Capacitance | 2.34nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | -20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 540mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 540mW |
| Rds On Max | 32mR |
| RoHS | Compliant |
Download the complete datasheet for NXP PMN27UP115 to view detailed technical specifications.
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