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Technical Specifications
NXP PMN35EN115 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 5.1A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 31MR |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 334pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 31mR |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 4ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMN35EN115 Datasheet
Download the complete datasheet for NXP PMN35EN115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.