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Technical Specifications
NXP PMN45EN135 technical specifications.
General
Package/Case
SOT
Continuous Drain Current (ID)
5.2A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
40mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
40MR
Dual Supply Voltage
30V
Fall Time
19ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
495pF
Lead Free
Lead Free
Length
3.1mm
Max Dual Supply Voltage
30V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.75W
Nominal Vgs
1.5V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.75W
Radiation Hardening
No
Rds On Max
40mR
Reach SVHC Compliant
No
Series
TrenchMOS™
Termination
SMD/SMT
Threshold Voltage
1.5V
Turn-Off Delay Time
28ns
Turn-On Delay Time
14ns
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
NXP PMN45EN135 Datasheet
Download the complete datasheet for NXP PMN45EN135 to view detailed technical specifications.
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