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Technical Specifications
NXP PMR670UPE115 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 480mA |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 670mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 72ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 87pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | -20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Rds On Max | 850mR |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 18ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMR670UPE115 Datasheet
Download the complete datasheet for NXP PMR670UPE115 to view detailed technical specifications.
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