Quick Jump:
Technical Specifications
NXP PMR780SN115 technical specifications.
General
| Package/Case | SOT-416 |
| Continuous Drain Current (ID) | 550mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 920mR |
| Drain to Source Voltage (Vdss) | 60V |
| Dual Supply Voltage | 60V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.85mm |
| Input Capacitance | 23pF |
| Lead Free | Lead Free |
| Length | 1.8mm |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 530mW |
| Nominal Vgs | 2V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 530mW |
| Radiation Hardening | No |
| Rds On Max | 920mR |
| Reach SVHC Compliant | No |
| Series | TrenchMOS™ |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 5ns |
| Turn-On Delay Time | 2ns |
| Width | 0.9mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMR780SN115 Datasheet
Download the complete datasheet for NXP PMR780SN115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
