MOSFET UTRENCHMOS (TM) FET
PackageSOT-416
PolarityN-CHANNEL
Power530mW
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Technical Specifications
NXP PMR780SNT/R technical specifications.
General
| Package/Case | SOT-416 |
| Continuous Drain Current (ID) | 550mA |
| Drain to Source Breakdown Voltage | 60V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 530mW |
| Turn-Off Delay Time | 5ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMR780SNT/R Datasheet
Download the complete datasheet for NXP PMR780SNT/R to view detailed technical specifications.
No datasheet is available for this part.