The PMST6429,115 is a single NPN transistor with a collector base voltage of 55V and a maximum collector current of 100mA. It features a gain bandwidth product of 700MHz and a maximum power dissipation of 200mW. The transistor is packaged in a SC package and is suitable for surface mount applications. It operates over a temperature range of -65°C to 150°C and is compliant with RoHS regulations.
NXP PMST6429,115 technical specifications.
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 55V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 700MHz |
| Gain Bandwidth Product | 700MHz |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Frequency | 700MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 700MHz |
| RoHS | Compliant |
Download the complete datasheet for NXP PMST6429,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
