The PMST6429T/R is a NPN transistor from NXP, packaged in a SOT-323 case. It can handle a collector-emitter voltage of up to 45V and has a maximum power dissipation of 200mW. The device has a gain bandwidth product of 700MHz and a minimum current gain of 500. The operating temperature range is -65°C to 150°C.
NXP PMST6429T/R technical specifications.
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 55V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector-emitter Voltage-Max | 45V |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 700MHz |
| hFE Min | 500 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for NXP PMST6429T/R to view detailed technical specifications.
No datasheet is available for this part.
