The PMV213SNT/R is a TO-236AB packaged N-Channel MOSFET with a continuous drain current of 1.9A and a drain to source breakdown voltage of 100V. It features a drain to source resistance of 250mR and a gate to source voltage of 30V. The device can handle a power dissipation of 2W and has a maximum operating temperature of 150°C. The PMV213SNT/R is available in tape and reel packaging with a quantity of 3000 units per reel.
PackageTO-236AB
PolarityN-CHANNEL
Power2W
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Technical Specifications
NXP PMV213SNT/R technical specifications.
General
| Package/Case | TO-236AB |
| Continuous Drain Current (ID) | 1.9A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 250mR |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Turn-Off Delay Time | 9.5ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMV213SNT/R Datasheet
Download the complete datasheet for NXP PMV213SNT/R to view detailed technical specifications.
No datasheet is available for this part.