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Technical Specifications
NXP PMV30UN215 technical specifications.
General
Package/Case
SOT
Continuous Drain Current (ID)
5.7A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
36mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
36MR
Fall Time
13ns
Gate to Source Voltage (Vgs)
8V
Height
1mm
Input Capacitance
460pF
Lead Free
Lead Free
Length
3mm
Max Dual Supply Voltage
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.9W
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.9W
Radiation Hardening
No
Rds On Max
36mR
Reach SVHC Compliant
No
Series
TrenchMOS™
Threshold Voltage
700mV
Turn-Off Delay Time
53ns
Turn-On Delay Time
7ns
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
NXP PMV30UN215 Datasheet
Download the complete datasheet for NXP PMV30UN215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.