The PSMN005-25D/T3 is a high-power N-Channel MOSFET from NXP, featuring a drain to source breakdown voltage of 25V and a continuous drain current of 75A. It is packaged in a SOT-428 package and is RoHS compliant. The device operates over a temperature range of -55°C to 175°C and has a power dissipation of 125W. The PSMN005-25D/T3 is suitable for high-current switching applications.
PackageSOT-428
PolarityN-CHANNEL
Power125W
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Technical Specifications
NXP PSMN005-25D/T3 technical specifications.
General
| Package/Case | SOT-428 |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 5.8mR |
| Fall Time | 216ns |
| Gate to Source Voltage (Vgs) | 15V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 270ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PSMN005-25D/T3 Datasheet
Download the complete datasheet for NXP PSMN005-25D/T3 to view detailed technical specifications.
No datasheet is available for this part.