The PSMN005-75P,127 is an N-Channel TrenchMOS MOSFET with a maximum drain current of 75A and a maximum drain to source breakdown voltage of 75V. It has a maximum drain to source resistance of 5mR and a maximum power dissipation of 230W. The device is packaged in a SOT package and is lead free and RoHS compliant. It operates over a temperature range of -55°C to 175°C.
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NXP PSMN005-75P,127 technical specifications.
| Package/Case | SOT |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 5mR |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 74ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 8.25nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 75V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 230W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 230W |
| Radiation Hardening | No |
| Rds On Max | 5mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 144ns |
| Turn-On Delay Time | 37ns |
| RoHS | Compliant |
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